Chosun University

所属機関: Chosun University
研究者: Nam-Hoon Kim, P. J. Ko (未定)
国: 韓国
共著論文: 29

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論文一覧 (29)

2026
Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2026) 'Comparative study of SnSe2/WSe2 junction field-effect transistor and SnSe2/WSe2/SnSe2 gate-all-around junction field-effect transistor', Journal of Nanoelectronics and Optoelectronics, 21(4), pp. 321–328.論文Abdelkader Abderrahmane
2026
Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2026) 'Electronic properties of MoSe2/ZrSe3 junction field effect transistor', Chalcogenide Letters, 23(7), p. 1.論文Abdelkader Abderrahmane
2024
Abderrahmane, A., Woo, C., Jung, P.G. and Ko, P.J. (2024) 'Multifunctional WSe2/MoSe2/WSe2/MoSe2 heterostructures', Materials Science in Semiconductor Processing, 169, article no. 107864. 被引用 10 回論文Abdelkader Abderrahmane
2024
Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2024) 'Performance enhancement of MoSe2 and WSe2 based junction field effect transistors with gate-all-around structure', Crystals, 14(11), p. 984. 被引用 2 回論文Abdelkader Abderrahmane
2023
Abderrahmane, A., Senouci, K., Hachemi, B. and Ko, P.J. (2023) '2D gallium sulfide-based 1D photonic crystal biosensor for glucose concentration detection', Materials, 16(13), p. 4621. 被引用 23 回論文Abdelkader Abderrahmane
2023
Abderrahmane, A., Senouci, K., Hachemi, B. and Ko, P.J. (2023) 'Design and performance analysis of perovskites unidimensional photonic crystal-based biosensors for extracellular vesicles detection: a numerical investigation', Crystals, 13(6), p. 945. 被引用 1 回論文Abdelkader Abderrahmane
2022
Abderrahmane, A., Jung, P.G., Woo, C. and Ko, P.J. (2022) 'Dual-gate graphene/h-BN/GaSe metal-insulator-semiconductor field effect transistor (MISFET)', physica status solidi (a). doi:10.1002/pssa.202100818. 被引用 4 回論文Abdelkader Abderrahmane
2022
Abderrahmane, A., Jung, P.G., Woo, C. and Ko, P.J. (2022) 'Effect of gate dielectric material on the electrical properties of MoSe2-based metal-insulator-semiconductor field-effect transistor', Crystals, 12(9), p. 1301. doi:10.3390/cryst12091301. 被引用 7 回論文Abdelkader Abderrahmane
2022
Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Low power consumption gate-tunable WSe2/SnSe2 van der Waals tunnel field-effect transistor', Electronics, 11(5), p. 833. doi:10.3390/electronics11050833. 被引用 8 回論文Abdelkader Abderrahmane
2022
Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures', Journal of Materials Science: Materials in Electronics, 33(15), pp. 11841–11850. doi:10.1007/s10854-022-08147-3. 被引用 5 回論文Abdelkader Abderrahmane
2022
Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Optoelectronic properties of low power consumption h-BN shielded Gr/n-MoSe2/p-BP based heterojunction field effect transistor (HJFET)', Coatings, 12(4), p. 445. doi:10.3390/coatings12040445. 被引用 3 回論文Abdelkader Abderrahmane
2021
Abderrahmane, A., Woo, C. and Ko, P.J. (2021) 'Black phosphorus/molybdenum diselenide heterojunction-based photodetector', Journal of Electronic Materials, 50(10), pp. 5713–5720. doi:10.1007/s11664-021-09097-y. 被引用 16 回論文Abdelkader Abderrahmane
2021
Abderrahmane, A., Woo, C. and Ko, P.J. (2021) 'Tunable optoelectronic properties of a two-dimensional graphene/alpha-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor', Journal of Materials Science: Materials in Electronics, 32(15), pp. 20252–20258. doi:10.1007/s10854-021-06528-8. 被引用 14 回論文Abdelkader Abderrahmane
2020
Jung, P.G., Oh, J.M., Kim, N.H., Abderrahmane, A. and Ko, P.J. (2020) 'Optoelectronic properties of two-dimensional molybdenum diselenide dual-gated MISFET-based photodetector', Optik, 224, article no. 165427. doi:10.1016/j.ijleo.2020.165427. 被引用 6 回論文Abdelkader Abderrahmane
2019
Abderrahmane, A., Oh, J.M., Kim, N.H., Ko, P.J. and Sandhu, A. (2019) 'Micro-Hall sensors based on two-dimensional molybdenum diselenide', Journal of Nanoscience and Nanotechnology, 19(7), pp. 4330–4332. doi:10.1166/jnn.2019.16266. 被引用 5 回論文Abdelkader Abderrahmane
2019
Achouri, M.M., Tab, A., Abderrahmane, A., Lee, D.J., Oh, J.M., Kim, N.H. and Ko, P.J. (2019) 'Thickness dependence of optoelectronic properties of molybdenum diselenide-based nanodevices', Journal of Electronic Materials, 48(11), pp. 7025–7030. doi:10.1007/s11664-019-07506-x. 被引用 8 回論文Abdelkader Abderrahmane
2018
Abderrahmane, A., Ko, P.J., Jung, P.G., Kim, N.H. and Sandhu, A. (2018) 'Optoelectronic characterizations of two-dimensional h-BN/MoSe2 heterostructures based photodetector', Science of Advanced Materials, 10(5), pp. 627–631. doi:10.1166/sam.2018.3135. 被引用 10 回論文Abdelkader Abderrahmane
2017
Abderrahmane, A., Ko, P.J., Jung, P.G. and Kim, N.H. (2017) 'Gate-tunable optoelectronic properties of nano-layered GaSe based photodetector', Optical Materials Express, 7(2), pp. 587–592. doi:10.1364/OME.7.000587. 被引用 26 回論文Abdelkader Abderrahmane
2017
Ko, P.J., Abderrahmane, A., Kim, N.H. and Sandhu, A. (2017) 'High-performance near-infrared photodetector based on nano-layered MoSe2', Semiconductor Science and Technology, 32(6), article no. 065015. doi:10.1088/1361-6641/aa6819. 被引用 69 回論文Abdelkader Abderrahmane
2016
Ko, P.J., Abderrahmane, A., Takamura, T., Kim, N.H. and Sandhu, A. (2016) 'Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector', Nanotechnology, 27(32), article no. 325202. doi:10.1088/0957-4484/27/32/325202. 被引用 60 回論文Abdelkader Abderrahmane
2016
Ko, P.J., Abderrahmane, A., Yoo, M.H., Kim, N.H. and Sandhu, A. (2016) 'Two-dimensional h-BN/MoSe2 heterostructures based phototransistors', in Korean Vacuum Society Conference Abstracts, p. 1336.会議発表Abdelkader Abderrahmane
2015
Ko, P.J., Abderrahmane, A., Thu, T.V., Ortega, D., Takamura, T. and Sandhu, A. (2015) 'Laser power dependent optical properties of mono- and few-layer MoS2', Journal of Nanoscience and Nanotechnology, 15(9), pp. 6843–6846. doi:10.1166/jnn.2015.10348. 被引用 37 回論文Abdelkader Abderrahmane
2014
Abderrahmane, A., Takahashi, H., Tashiro, T., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors', AIP Conference Proceedings, 1585, p. 123. doi:10.1063/1.4866629. 被引用 1 回論文Abdelkader Abderrahmane
2014
Abderrahmane, A., Ko, P.J., Thu, T.V., Ishizawa, S., Takamura, T. and Sandhu, A. (2014) 'High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors', Nanotechnology, 25(36), article no. 365202. doi:10.1088/0957-4484/25/36/365202. 被引用 202 回論文Abdelkader Abderrahmane
2014
Ko, P.J., Thu, T.V., Takahashi, H., Abderrahmane, A., Takamura, T. and Sandhu, A. (2014) 'High precision laser induced etching of multilayered MoS2', AIP Conference Proceedings, 1585, p. 73. doi:10.1063/1.4866622. 被引用 4 回論文Abdelkader Abderrahmane
2014
Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T., Shibasaki, I. and Sandhu, A. (2014) 'High proton radiation tolerance of InAsSb quantum wells based micro-Hall sensors', IEEE Electron Device Letters, 35(12), pp. 1305–1307. doi:10.1109/LED.2014.2359879. 被引用 1 回論文Abdelkader Abderrahmane
2014
Ko, P.J., Thu, T.V., Takamura, T., Abderrahmane, A. and Sandhu, A. (2014) 'MoSe2 semiconductor indirect-to-direct transition by laser induced etching', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting. 被引用 2 回会議発表Abdelkader Abderrahmane
2014
Abderrahmane, A., Tashiro, T., Takahashi, H., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons', Applied Physics Letters, 104(2), article no. 023508. doi:10.1063/1.4861902. 被引用 8 回論文Abdelkader Abderrahmane
2014
Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN based magnetic sensor at cryogenic temperature', IEEE Electron Device Letters, 35(11), pp. 1130–1132. doi:10.1109/LED.2014.2358613. 被引用 13 回論文Abdelkader Abderrahmane

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