Chosun University
- المؤسسة
- Chosun University
- الباحثون
- Nam-Hoon Kim, P. J. Ko (سيحدد لاحقا)
- البلد
- كوريا الجنوبية
- منشورات مشتركة
- 29
قائمة المنشورات (29)
- 2026Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2026) 'Comparative study of SnSe2/WSe2 junction field-effect transistor and SnSe2/WSe2/SnSe2 gate-all-around junction field-effect transistor', Journal of Nanoelectronics and Optoelectronics, 21(4), pp. 321–328.مقالAbdelkader Abderrahmane
- 2026Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2026) 'Electronic properties of MoSe2/ZrSe3 junction field effect transistor', Chalcogenide Letters, 23(7), p. 1.مقالAbdelkader Abderrahmane
- 2024Abderrahmane, A., Woo, C., Jung, P.G. and Ko, P.J. (2024) 'Multifunctional WSe2/MoSe2/WSe2/MoSe2 heterostructures', Materials Science in Semiconductor Processing, 169, article no. 107864. استشهد به 10 مرةمقالAbdelkader Abderrahmane
- 2024Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2024) 'Performance enhancement of MoSe2 and WSe2 based junction field effect transistors with gate-all-around structure', Crystals, 14(11), p. 984. استشهد به 2 مرةمقالAbdelkader Abderrahmane
- 2023Abderrahmane, A., Senouci, K., Hachemi, B. and Ko, P.J. (2023) '2D gallium sulfide-based 1D photonic crystal biosensor for glucose concentration detection', Materials, 16(13), p. 4621. استشهد به 23 مرةمقالAbdelkader Abderrahmane
- 2023Abderrahmane, A., Senouci, K., Hachemi, B. and Ko, P.J. (2023) 'Design and performance analysis of perovskites unidimensional photonic crystal-based biosensors for extracellular vesicles detection: a numerical investigation', Crystals, 13(6), p. 945. استشهد به 1 مرةمقالAbdelkader Abderrahmane
- 2022Abderrahmane, A., Jung, P.G., Woo, C. and Ko, P.J. (2022) 'Dual-gate graphene/h-BN/GaSe metal-insulator-semiconductor field effect transistor (MISFET)', physica status solidi (a). doi:10.1002/pssa.202100818. استشهد به 4 مرةمقالAbdelkader Abderrahmane
- 2022Abderrahmane, A., Jung, P.G., Woo, C. and Ko, P.J. (2022) 'Effect of gate dielectric material on the electrical properties of MoSe2-based metal-insulator-semiconductor field-effect transistor', Crystals, 12(9), p. 1301. doi:10.3390/cryst12091301. استشهد به 7 مرةمقالAbdelkader Abderrahmane
- 2022Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Low power consumption gate-tunable WSe2/SnSe2 van der Waals tunnel field-effect transistor', Electronics, 11(5), p. 833. doi:10.3390/electronics11050833. استشهد به 8 مرةمقالAbdelkader Abderrahmane
- 2022Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures', Journal of Materials Science: Materials in Electronics, 33(15), pp. 11841–11850. doi:10.1007/s10854-022-08147-3. استشهد به 5 مرةمقالAbdelkader Abderrahmane
- 2022Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Optoelectronic properties of low power consumption h-BN shielded Gr/n-MoSe2/p-BP based heterojunction field effect transistor (HJFET)', Coatings, 12(4), p. 445. doi:10.3390/coatings12040445. استشهد به 3 مرةمقالAbdelkader Abderrahmane
- 2021Abderrahmane, A., Woo, C. and Ko, P.J. (2021) 'Black phosphorus/molybdenum diselenide heterojunction-based photodetector', Journal of Electronic Materials, 50(10), pp. 5713–5720. doi:10.1007/s11664-021-09097-y. استشهد به 16 مرةمقالAbdelkader Abderrahmane
- 2021Abderrahmane, A., Woo, C. and Ko, P.J. (2021) 'Tunable optoelectronic properties of a two-dimensional graphene/alpha-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor', Journal of Materials Science: Materials in Electronics, 32(15), pp. 20252–20258. doi:10.1007/s10854-021-06528-8. استشهد به 14 مرةمقالAbdelkader Abderrahmane
- 2020Jung, P.G., Oh, J.M., Kim, N.H., Abderrahmane, A. and Ko, P.J. (2020) 'Optoelectronic properties of two-dimensional molybdenum diselenide dual-gated MISFET-based photodetector', Optik, 224, article no. 165427. doi:10.1016/j.ijleo.2020.165427. استشهد به 6 مرةمقالAbdelkader Abderrahmane
- 2019Abderrahmane, A., Oh, J.M., Kim, N.H., Ko, P.J. and Sandhu, A. (2019) 'Micro-Hall sensors based on two-dimensional molybdenum diselenide', Journal of Nanoscience and Nanotechnology, 19(7), pp. 4330–4332. doi:10.1166/jnn.2019.16266. استشهد به 5 مرةمقالAbdelkader Abderrahmane
- 2019Achouri, M.M., Tab, A., Abderrahmane, A., Lee, D.J., Oh, J.M., Kim, N.H. and Ko, P.J. (2019) 'Thickness dependence of optoelectronic properties of molybdenum diselenide-based nanodevices', Journal of Electronic Materials, 48(11), pp. 7025–7030. doi:10.1007/s11664-019-07506-x. استشهد به 8 مرةمقالAbdelkader Abderrahmane
- 2018Abderrahmane, A., Ko, P.J., Jung, P.G., Kim, N.H. and Sandhu, A. (2018) 'Optoelectronic characterizations of two-dimensional h-BN/MoSe2 heterostructures based photodetector', Science of Advanced Materials, 10(5), pp. 627–631. doi:10.1166/sam.2018.3135. استشهد به 10 مرةمقالAbdelkader Abderrahmane
- 2017Abderrahmane, A., Ko, P.J., Jung, P.G. and Kim, N.H. (2017) 'Gate-tunable optoelectronic properties of nano-layered GaSe based photodetector', Optical Materials Express, 7(2), pp. 587–592. doi:10.1364/OME.7.000587. استشهد به 26 مرةمقالAbdelkader Abderrahmane
- 2017Ko, P.J., Abderrahmane, A., Kim, N.H. and Sandhu, A. (2017) 'High-performance near-infrared photodetector based on nano-layered MoSe2', Semiconductor Science and Technology, 32(6), article no. 065015. doi:10.1088/1361-6641/aa6819. استشهد به 69 مرةمقالAbdelkader Abderrahmane
- 2016Ko, P.J., Abderrahmane, A., Takamura, T., Kim, N.H. and Sandhu, A. (2016) 'Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector', Nanotechnology, 27(32), article no. 325202. doi:10.1088/0957-4484/27/32/325202. استشهد به 60 مرةمقالAbdelkader Abderrahmane
- 2016Ko, P.J., Abderrahmane, A., Yoo, M.H., Kim, N.H. and Sandhu, A. (2016) 'Two-dimensional h-BN/MoSe2 heterostructures based phototransistors', in Korean Vacuum Society Conference Abstracts, p. 1336.مداخلةAbdelkader Abderrahmane
- 2015Ko, P.J., Abderrahmane, A., Thu, T.V., Ortega, D., Takamura, T. and Sandhu, A. (2015) 'Laser power dependent optical properties of mono- and few-layer MoS2', Journal of Nanoscience and Nanotechnology, 15(9), pp. 6843–6846. doi:10.1166/jnn.2015.10348. استشهد به 37 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Takahashi, H., Tashiro, T., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors', AIP Conference Proceedings, 1585, p. 123. doi:10.1063/1.4866629. استشهد به 1 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Ko, P.J., Thu, T.V., Ishizawa, S., Takamura, T. and Sandhu, A. (2014) 'High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors', Nanotechnology, 25(36), article no. 365202. doi:10.1088/0957-4484/25/36/365202. استشهد به 202 مرةمقالAbdelkader Abderrahmane
- 2014Ko, P.J., Thu, T.V., Takahashi, H., Abderrahmane, A., Takamura, T. and Sandhu, A. (2014) 'High precision laser induced etching of multilayered MoS2', AIP Conference Proceedings, 1585, p. 73. doi:10.1063/1.4866622. استشهد به 4 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T., Shibasaki, I. and Sandhu, A. (2014) 'High proton radiation tolerance of InAsSb quantum wells based micro-Hall sensors', IEEE Electron Device Letters, 35(12), pp. 1305–1307. doi:10.1109/LED.2014.2359879. استشهد به 1 مرةمقالAbdelkader Abderrahmane
- 2014Ko, P.J., Thu, T.V., Takamura, T., Abderrahmane, A. and Sandhu, A. (2014) 'MoSe2 semiconductor indirect-to-direct transition by laser induced etching', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting. استشهد به 2 مرةمداخلةAbdelkader Abderrahmane
- 2014Abderrahmane, A., Tashiro, T., Takahashi, H., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons', Applied Physics Letters, 104(2), article no. 023508. doi:10.1063/1.4861902. استشهد به 8 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN based magnetic sensor at cryogenic temperature', IEEE Electron Device Letters, 35(11), pp. 1130–1132. doi:10.1109/LED.2014.2358613. استشهد به 13 مرةمقالAbdelkader Abderrahmane