Toyohashi University of Technology

Établissement

Toyohashi University of Technology

Chercheurs

A. Sandhu (À confirmer)

Pays

Japon

publications communes

19

Site web

Liste des publications (19)

• 2019
  Abderrahmane, A., Oh, J.M., Kim, N.H., Ko, P.J. and Sandhu, A. (2019) 'Micro-Hall sensors based on two-dimensional molybdenum diselenide', Journal of Nanoscience and Nanotechnology, 19(7), pp. 4330–4332. doi:10.1166/jnn.2019.16266. Cité 5 foisArticleAbdelkader Abderrahmane
• 2018
  Abderrahmane, A., Ko, P.J., Jung, P.G., Kim, N.H. and Sandhu, A. (2018) 'Optoelectronic characterizations of two-dimensional h-BN/MoSe2 heterostructures based photodetector', Science of Advanced Materials, 10(5), pp. 627–631. doi:10.1166/sam.2018.3135. Cité 10 foisArticleAbdelkader Abderrahmane
• 2017
  Ko, P.J., Abderrahmane, A., Kim, N.H. and Sandhu, A. (2017) 'High-performance near-infrared photodetector based on nano-layered MoSe2', Semiconductor Science and Technology, 32(6), article no. 065015. doi:10.1088/1361-6641/aa6819. Cité 69 foisArticleAbdelkader Abderrahmane
• 2016
  Ko, P.J., Abderrahmane, A., Takamura, T., Kim, N.H. and Sandhu, A. (2016) 'Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector', Nanotechnology, 27(32), article no. 325202. doi:10.1088/0957-4484/27/32/325202. Cité 60 foisArticleAbdelkader Abderrahmane
• 2016
  Ko, P.J., Abderrahmane, A., Yoo, M.H., Kim, N.H. and Sandhu, A. (2016) 'Two-dimensional h-BN/MoSe2 heterostructures based phototransistors', in Korean Vacuum Society Conference Abstracts, p. 1336.CommunicationAbdelkader Abderrahmane
• 2015
  Ko, P.J., Abderrahmane, A., Thu, T.V., Ortega, D., Takamura, T. and Sandhu, A. (2015) 'Laser power dependent optical properties of mono- and few-layer MoS2', Journal of Nanoscience and Nanotechnology, 15(9), pp. 6843–6846. doi:10.1166/jnn.2015.10348. Cité 37 foisArticleAbdelkader Abderrahmane
• 2014
  Abderrahmane, A., Takahashi, H., Tashiro, T., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors', AIP Conference Proceedings, 1585, p. 123. doi:10.1063/1.4866629. Cité 1 foisArticleAbdelkader Abderrahmane
• 2014
  Abderrahmane, A., Ko, P.J., Thu, T.V., Ishizawa, S., Takamura, T. and Sandhu, A. (2014) 'High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors', Nanotechnology, 25(36), article no. 365202. doi:10.1088/0957-4484/25/36/365202. Cité 202 foisArticleAbdelkader Abderrahmane
• 2014
  Ko, P.J., Thu, T.V., Takahashi, H., Abderrahmane, A., Takamura, T. and Sandhu, A. (2014) 'High precision laser induced etching of multilayered MoS2', AIP Conference Proceedings, 1585, p. 73. doi:10.1063/1.4866622. Cité 4 foisArticleAbdelkader Abderrahmane
• 2014
  Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T., Shibasaki, I. and Sandhu, A. (2014) 'High proton radiation tolerance of InAsSb quantum wells based micro-Hall sensors', IEEE Electron Device Letters, 35(12), pp. 1305–1307. doi:10.1109/LED.2014.2359879. Cité 1 foisArticleAbdelkader Abderrahmane
• 2014
  Ko, P.J., Thu, T.V., Takamura, T., Abderrahmane, A. and Sandhu, A. (2014) 'MoSe2 semiconductor indirect-to-direct transition by laser induced etching', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting. Cité 2 foisCommunicationAbdelkader Abderrahmane
• 2014
  Abderrahmane, A., Tashiro, T., Takahashi, H., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons', Applied Physics Letters, 104(2), article no. 023508. doi:10.1063/1.4861902. Cité 8 foisArticleAbdelkader Abderrahmane
• 2014
  Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN based magnetic sensor at cryogenic temperature', IEEE Electron Device Letters, 35(11), pp. 1130–1132. doi:10.1109/LED.2014.2358613. Cité 13 foisArticleAbdelkader Abderrahmane
• 2014
  Abderrahmane, A., Takamura, T., Sato, S., Ohshima, T., Okada, H. and Sandhu, A. (2014) 'Radiation hard AlGaN/GaN heterostructure micro-Hall sensors', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting.CommunicationAbdelkader Abderrahmane
• 2013
  Abderrahmane, A., Koide, S., Tahara, T., Sato, S., Ohshima, T., Okada, H. and Sandhu, A. (2013) 'Effect of proton irradiation on 2DEG in AlGaN/GaN heterostructures', Journal of Physics: Conference Series, 433(1), article no. 012011. Cité 8 foisArticleAbdelkader Abderrahmane
• 2013
  Abderrahmane, A., Koide, S., Tashiro, T., Okada, H., Takahashi, H., Sato, S., Ohshima, T. and Sandhu, A. (2013) 'Effect of proton irradiation on AlGaN/GaN micro-Hall sensors', Applied Physics Letters, 102(19), article no. 193510. doi:10.1063/1.4805357. Cité 14 foisArticleAbdelkader Abderrahmane
• 2012
  Okada, H., Abderrahmane, A., Koide, S., Takahashi, H., Sato, S., Ohshima, T. and Sandhu, A. (2012) 'Effects of proton irradiation on the magnetoelectric properties of 2DEG AlGaN/GaN micro-Hall sensors', Journal of Physics: Conference Series, 352(1), article no. 012010. doi:10.1088/1742-6596/352/1/012010. Cité 5 foisArticleAbdelkader Abderrahmane
• 2012
  Koide, S., Takahashi, H., Abderrahmane, A., Shibasaki, I. and Sandhu, A. (2012) 'High temperature Hall sensors using AlGaN/GaN HEMT structures', Journal of Physics: Conference Series, 352(1), article no. 012009. doi:10.1088/1742-6596/352/1/012009. Cité 56 foisArticleAbdelkader Abderrahmane
• 2012
  Abderrahmane, A., Koide, S., Sato, S., Ohshima, T., Sandhu, A. and Okada, H. (2012) 'Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments', IEEE Transactions on Magnetics, 48(11), pp. 4421–4423. doi:10.1109/TMAG.2012.2196986. Cité 29 foisArticleAbdelkader Abderrahmane

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