Toyohashi University of Technology
- المؤسسة
- Toyohashi University of Technology
- الباحثون
- A. Sandhu (سيحدد لاحقا)
- البلد
- اليابان
- منشورات مشتركة
- 19
قائمة المنشورات (19)
- 2019Abderrahmane, A., Oh, J.M., Kim, N.H., Ko, P.J. and Sandhu, A. (2019) 'Micro-Hall sensors based on two-dimensional molybdenum diselenide', Journal of Nanoscience and Nanotechnology, 19(7), pp. 4330–4332. doi:10.1166/jnn.2019.16266. استشهد به 5 مرةمقالAbdelkader Abderrahmane
- 2018Abderrahmane, A., Ko, P.J., Jung, P.G., Kim, N.H. and Sandhu, A. (2018) 'Optoelectronic characterizations of two-dimensional h-BN/MoSe2 heterostructures based photodetector', Science of Advanced Materials, 10(5), pp. 627–631. doi:10.1166/sam.2018.3135. استشهد به 10 مرةمقالAbdelkader Abderrahmane
- 2017Ko, P.J., Abderrahmane, A., Kim, N.H. and Sandhu, A. (2017) 'High-performance near-infrared photodetector based on nano-layered MoSe2', Semiconductor Science and Technology, 32(6), article no. 065015. doi:10.1088/1361-6641/aa6819. استشهد به 69 مرةمقالAbdelkader Abderrahmane
- 2016Ko, P.J., Abderrahmane, A., Takamura, T., Kim, N.H. and Sandhu, A. (2016) 'Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector', Nanotechnology, 27(32), article no. 325202. doi:10.1088/0957-4484/27/32/325202. استشهد به 60 مرةمقالAbdelkader Abderrahmane
- 2016Ko, P.J., Abderrahmane, A., Yoo, M.H., Kim, N.H. and Sandhu, A. (2016) 'Two-dimensional h-BN/MoSe2 heterostructures based phototransistors', in Korean Vacuum Society Conference Abstracts, p. 1336.مداخلةAbdelkader Abderrahmane
- 2015Ko, P.J., Abderrahmane, A., Thu, T.V., Ortega, D., Takamura, T. and Sandhu, A. (2015) 'Laser power dependent optical properties of mono- and few-layer MoS2', Journal of Nanoscience and Nanotechnology, 15(9), pp. 6843–6846. doi:10.1166/jnn.2015.10348. استشهد به 37 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Takahashi, H., Tashiro, T., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors', AIP Conference Proceedings, 1585, p. 123. doi:10.1063/1.4866629. استشهد به 1 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Ko, P.J., Thu, T.V., Ishizawa, S., Takamura, T. and Sandhu, A. (2014) 'High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors', Nanotechnology, 25(36), article no. 365202. doi:10.1088/0957-4484/25/36/365202. استشهد به 202 مرةمقالAbdelkader Abderrahmane
- 2014Ko, P.J., Thu, T.V., Takahashi, H., Abderrahmane, A., Takamura, T. and Sandhu, A. (2014) 'High precision laser induced etching of multilayered MoS2', AIP Conference Proceedings, 1585, p. 73. doi:10.1063/1.4866622. استشهد به 4 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T., Shibasaki, I. and Sandhu, A. (2014) 'High proton radiation tolerance of InAsSb quantum wells based micro-Hall sensors', IEEE Electron Device Letters, 35(12), pp. 1305–1307. doi:10.1109/LED.2014.2359879. استشهد به 1 مرةمقالAbdelkader Abderrahmane
- 2014Ko, P.J., Thu, T.V., Takamura, T., Abderrahmane, A. and Sandhu, A. (2014) 'MoSe2 semiconductor indirect-to-direct transition by laser induced etching', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting. استشهد به 2 مرةمداخلةAbdelkader Abderrahmane
- 2014Abderrahmane, A., Tashiro, T., Takahashi, H., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons', Applied Physics Letters, 104(2), article no. 023508. doi:10.1063/1.4861902. استشهد به 8 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN based magnetic sensor at cryogenic temperature', IEEE Electron Device Letters, 35(11), pp. 1130–1132. doi:10.1109/LED.2014.2358613. استشهد به 13 مرةمقالAbdelkader Abderrahmane
- 2014Abderrahmane, A., Takamura, T., Sato, S., Ohshima, T., Okada, H. and Sandhu, A. (2014) 'Radiation hard AlGaN/GaN heterostructure micro-Hall sensors', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting.مداخلةAbdelkader Abderrahmane
- 2013Abderrahmane, A., Koide, S., Tahara, T., Sato, S., Ohshima, T., Okada, H. and Sandhu, A. (2013) 'Effect of proton irradiation on 2DEG in AlGaN/GaN heterostructures', Journal of Physics: Conference Series, 433(1), article no. 012011. استشهد به 8 مرةمقالAbdelkader Abderrahmane
- 2013Abderrahmane, A., Koide, S., Tashiro, T., Okada, H., Takahashi, H., Sato, S., Ohshima, T. and Sandhu, A. (2013) 'Effect of proton irradiation on AlGaN/GaN micro-Hall sensors', Applied Physics Letters, 102(19), article no. 193510. doi:10.1063/1.4805357. استشهد به 14 مرةمقالAbdelkader Abderrahmane
- 2012Okada, H., Abderrahmane, A., Koide, S., Takahashi, H., Sato, S., Ohshima, T. and Sandhu, A. (2012) 'Effects of proton irradiation on the magnetoelectric properties of 2DEG AlGaN/GaN micro-Hall sensors', Journal of Physics: Conference Series, 352(1), article no. 012010. doi:10.1088/1742-6596/352/1/012010. استشهد به 5 مرةمقالAbdelkader Abderrahmane
- 2012Koide, S., Takahashi, H., Abderrahmane, A., Shibasaki, I. and Sandhu, A. (2012) 'High temperature Hall sensors using AlGaN/GaN HEMT structures', Journal of Physics: Conference Series, 352(1), article no. 012009. doi:10.1088/1742-6596/352/1/012009. استشهد به 56 مرةمقالAbdelkader Abderrahmane
- 2012Abderrahmane, A., Koide, S., Sato, S., Ohshima, T., Sandhu, A. and Okada, H. (2012) 'Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments', IEEE Transactions on Magnetics, 48(11), pp. 4421–4423. doi:10.1109/TMAG.2012.2196986. استشهد به 29 مرةمقالAbdelkader Abderrahmane