Abdelkader ABDERRAHMANE

Présentation

Abdelkader Abderrahmane travaille sur les nano-dispositifs et nano-capteurs, les matériaux bidimensionnels (MoSe2, GaSe, WSe2, SnSe2, h-BN, graphène, phosphore noir) pour la photodétection et les transistors, ainsi que sur les capteurs à effet Hall en milieu radiatif et à haute température (AlGaN/GaN, InAsSb).

Il a également développé des travaux sur les micro- et nanorobots magnétiques, les couches minces élaborées par SILAR, sol-gel et dip-coating, l'internet des objets médicaux (IoMT) et l'agriculture connectée. Ses travaux ont été présentés notamment aux conférences IRAGO (Japon), OPAL (Algérie) et ICAE (Corée).

Domaines de recherche

Physique appliquée
Nanotechnologie
Électronique
Internet des objets

Publications à la une

2014
Abderrahmane, A., Ko, P.J., Thu, T.V., Ishizawa, S., Takamura, T. and Sandhu, A. (2014) 'High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors', Nanotechnology, 25(36), article no. 365202. doi:10.1088/0957-4484/25/36/365202. Cité 202 foisArticle
2017
Ko, P.J., Abderrahmane, A., Kim, N.H. and Sandhu, A. (2017) 'High-performance near-infrared photodetector based on nano-layered MoSe2', Semiconductor Science and Technology, 32(6), article no. 065015. doi:10.1088/1361-6641/aa6819. Cité 69 foisArticle
2016
Ko, P.J., Abderrahmane, A., Takamura, T., Kim, N.H. and Sandhu, A. (2016) 'Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector', Nanotechnology, 27(32), article no. 325202. doi:10.1088/0957-4484/27/32/325202. Cité 60 foisArticle
2012
Koide, S., Takahashi, H., Abderrahmane, A., Shibasaki, I. and Sandhu, A. (2012) 'High temperature Hall sensors using AlGaN/GaN HEMT structures', Journal of Physics: Conference Series, 352(1), article no. 012009. doi:10.1088/1742-6596/352/1/012009. Cité 56 foisArticle
2015
Ko, P.J., Abderrahmane, A., Thu, T.V., Ortega, D., Takamura, T. and Sandhu, A. (2015) 'Laser power dependent optical properties of mono- and few-layer MoS2', Journal of Nanoscience and Nanotechnology, 15(9), pp. 6843–6846. doi:10.1166/jnn.2015.10348. Cité 37 foisArticle

Liste des publications (52)

Références au format Harvard.

2026
Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2026) 'Comparative study of SnSe2/WSe2 junction field-effect transistor and SnSe2/WSe2/SnSe2 gate-all-around junction field-effect transistor', Journal of Nanoelectronics and Optoelectronics, 21(4), pp. 321–328.Article
2026
Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2026) 'Electronic properties of MoSe2/ZrSe3 junction field effect transistor', Chalcogenide Letters, 23(7), p. 1.Article
2025
Rouabhia, A., Dabou, R., Abderrahmane, A., Ziane, A., Bouraiou, A., Khelifi, S. et al. (2025) 'Low-cost real-time monitoring for enhanced efficiency in PV systems', Journal of Renewable Energies (Revue des Energies Renouvelables), 28(1), pp. 81–92. Cité 3 foisArticle
2024
Abderrahmane, A., Woo, C., Jung, P.G. and Ko, P.J. (2024) 'Multifunctional WSe2/MoSe2/WSe2/MoSe2 heterostructures', Materials Science in Semiconductor Processing, 169, article no. 107864. Cité 10 foisArticle
2024
Woo, C., Abderrahmane, A., Jung, P.G. and Ko, P.J. (2024) 'Performance enhancement of MoSe2 and WSe2 based junction field effect transistors with gate-all-around structure', Crystals, 14(11), p. 984. Cité 2 foisArticle
2023
Abderrahmane, A., Senouci, K., Hachemi, B. and Ko, P.J. (2023) '2D gallium sulfide-based 1D photonic crystal biosensor for glucose concentration detection', Materials, 16(13), p. 4621. Cité 23 foisArticle
2023
Benali, F., Ramdani, N., Tilmatine, A., Abderrahmane, A. and Achouri, M.M. (2023) 'Cultivation of irrigated tomatoes with ozonised water under a Mediterranean climate in Algeria', Acta agriculturae Slovenica, 119(1), pp. 1–11. Cité 1 foisArticle
2023
Abderrahmane, A., Senouci, K., Hachemi, B. and Ko, P.J. (2023) 'Design and performance analysis of perovskites unidimensional photonic crystal-based biosensors for extracellular vesicles detection: a numerical investigation', Crystals, 13(6), p. 945. Cité 1 foisArticle
2023
Kadri, L., Abderrahmane, A., Bulai, G., Carlescu, A., Doroftei, C., Motrescu, I., Gurlui, S., Leontie, L. and Adnane, M. (2023) 'Optical and structural analysis of TiO2-SiO2 nanocomposite thin films fabricated via pulsed laser deposition technique', Nanomaterials, 13(10), p. 1632. Cité 26 foisArticle
2022
Abderrahmane, A., Jung, P.G., Woo, C. and Ko, P.J. (2022) 'Dual-gate graphene/h-BN/GaSe metal-insulator-semiconductor field effect transistor (MISFET)', physica status solidi (a). doi:10.1002/pssa.202100818. Cité 4 foisArticle
2022
Abderrahmane, A., Jung, P.G., Woo, C. and Ko, P.J. (2022) 'Effect of gate dielectric material on the electrical properties of MoSe2-based metal-insulator-semiconductor field-effect transistor', Crystals, 12(9), p. 1301. doi:10.3390/cryst12091301. Cité 7 foisArticle
2022
Senouci, K., Mansour, M. and Abderrahmane, A. (2022) 'Electro-optic properties of one-dimensional (1D) nonlinear perfect photonic crystals based on lithium tantalate layer', Optik, 265, article no. 169537. doi:10.1016/j.ijleo.2022.169537. Cité 7 foisArticle
2022
Tadji, A., Abderrahmane, A., Zerdali, M. and Hamzaoui, S. (2022) 'Facile preparation of nanostructured ZnO via low-temperature hydrothermal method upon changing the precursor anion: the study of structural, morphological, and optical properties', Materials Today Communications, 31, article no. 103789. doi:10.1016/j.mtcomm.2022.103789. Cité 10 foisArticle
2022
Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Low power consumption gate-tunable WSe2/SnSe2 van der Waals tunnel field-effect transistor', Electronics, 11(5), p. 833. doi:10.3390/electronics11050833. Cité 8 foisArticle
2022
Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures', Journal of Materials Science: Materials in Electronics, 33(15), pp. 11841–11850. doi:10.1007/s10854-022-08147-3. Cité 5 foisArticle
2022
Abderrahmane, A., Woo, C. and Ko, P.J. (2022) 'Optoelectronic properties of low power consumption h-BN shielded Gr/n-MoSe2/p-BP based heterojunction field effect transistor (HJFET)', Coatings, 12(4), p. 445. doi:10.3390/coatings12040445. Cité 3 foisArticle
2022
Baba-Ahmed, I., Ghercă, D., Iordan, A.R., Palamaru, M.N., Mita, C., Ababei, G., Lupu, N., Baghdad, R., Abderrahmane, A., Roman, T., Bulai, G., Leontie, L. and Borhan, A.I. (2022) 'Sequential synthesis methodology yielding well-defined porous 75%SrTiO3/25%NiFe2O4 nanocomposite', Nanomaterials, 12(1), p. 138. doi:10.3390/nano12010138. Cité 4 foisArticle
2021
Abderrahmane, A., Woo, C. and Ko, P.J. (2021) 'Black phosphorus/molybdenum diselenide heterojunction-based photodetector', Journal of Electronic Materials, 50(10), pp. 5713–5720. doi:10.1007/s11664-021-09097-y. Cité 16 foisArticle
2021
Abderrahmane, A., Woo, C. and Ko, P.J. (2021) 'Tunable optoelectronic properties of a two-dimensional graphene/alpha-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor', Journal of Materials Science: Materials in Electronics, 32(15), pp. 20252–20258. doi:10.1007/s10854-021-06528-8. Cité 14 foisArticle
2020
Hachemi, B., Chama, Z., Alim-Ferhat, F., Lamini, E.S., Abderrahmane, A. et al. (2020) 'Fully automatic multisegmentation approach for magnetic resonance imaging brain tumor detection using improved region-growing and quasi-Monte Carlo-expectation maximization algorithm', International Journal of Imaging Systems and Technology, 30(1), pp. 104–111. doi:10.1002/ima.22376. Cité 11 foisArticle
2020
Tab, A., Bakha, Y., Abderrahmane, A., Hamzaoui, S. and Zerdali, M. (2020) 'Nano grain of zinc oxide assembled in hex nut deposited by sol gel coating method', in Proceedings of the 1st International Conference on Renewable Energy and Energy Conversion (ICREEC 2019), pp. 391–397. doi:10.1007/978-981-15-5444-5_49.Communication
2020
Jung, P.G., Oh, J.M., Kim, N.H., Abderrahmane, A. and Ko, P.J. (2020) 'Optoelectronic properties of two-dimensional molybdenum diselenide dual-gated MISFET-based photodetector', Optik, 224, article no. 165427. doi:10.1016/j.ijleo.2020.165427. Cité 6 foisArticle
2019
Sebaa, N., Adnane, M., Djelloul, A., Abderrahmane, A. and Sahraoui, T. (2019) 'Effect of increasing concentrations on sprayed Cu2ZnSnS4 thin films', Journal of Nano- and Electronic Physics, 11(5), article no. 05009. doi:10.21272/jnep.11(5).05009. Cité 3 foisArticle
2019
Cherif, F., Baba Ahmed, I., Abderrahmane, A. and Hamzaoui, S. (2019) 'Effect of pellet size and additive on silica carbothermic reduction in microwave furnace for solar grade silicon', Materials Science-Poland, 37(1), pp. 122–126. doi:10.2478/msp-2019-0014. Cité 9 foisArticle
2019
Tab, A., Abderrahmane, A., Bakha, Y., Hamzaoui, S. and Zerdali, M. (2019) 'Investigation on the optical transmission in UV range of sol-gel spin coated zinc oxide nanofilms deposited on glass', Optik, 194, article no. 163073. Cité 11 foisArticle
2019
Abderrahmane, A., Oh, J.M., Kim, N.H., Ko, P.J. and Sandhu, A. (2019) 'Micro-Hall sensors based on two-dimensional molybdenum diselenide', Journal of Nanoscience and Nanotechnology, 19(7), pp. 4330–4332. doi:10.1166/jnn.2019.16266. Cité 5 foisArticle
2019
Achouri, M.M., Tab, A., Abderrahmane, A., Lee, D.J., Oh, J.M., Kim, N.H. and Ko, P.J. (2019) 'Thickness dependence of optoelectronic properties of molybdenum diselenide-based nanodevices', Journal of Electronic Materials, 48(11), pp. 7025–7030. doi:10.1007/s11664-019-07506-x. Cité 8 foisArticle
2018
Achouri, M.M., Ziani, N., Bouamrane, R. and Abderrahmane, A. (2018) 'Molecular dynamics investigation of structures and the potentials of para tellurite (alpha-TeO2) and europium oxide (Eu2O3) materials by aiming the effect of Eu3+ low doping in alpha-TeO2 on the mechanical and structural properties', Indian Journal of Physics, 92(11), pp. 1373–1384. doi:10.1007/s12648-018-1232-2. Cité 1 foisArticle
2018
Abderrahmane, A., Ko, P.J., Jung, P.G., Kim, N.H. and Sandhu, A. (2018) 'Optoelectronic characterizations of two-dimensional h-BN/MoSe2 heterostructures based photodetector', Science of Advanced Materials, 10(5), pp. 627–631. doi:10.1166/sam.2018.3135. Cité 10 foisArticle
2017
Abderrahmane, A., Ko, P.J., Jung, P.G. and Kim, N.H. (2017) 'Gate-tunable optoelectronic properties of nano-layered GaSe based photodetector', Optical Materials Express, 7(2), pp. 587–592. doi:10.1364/OME.7.000587. Cité 26 foisArticle
2017
Ko, P.J., Abderrahmane, A., Kim, N.H. and Sandhu, A. (2017) 'High-performance near-infrared photodetector based on nano-layered MoSe2', Semiconductor Science and Technology, 32(6), article no. 065015. doi:10.1088/1361-6641/aa6819. Cité 69 foisArticle
2016
Zegadi, C., Abderrahmane, A., Chaumont, D., Abdelkebir, K. and Hamzaoui, S. (2016) 'Influence of Fe-doping on the morphological, structural and optical properties of zinc oxide film elaborated by dip-coating method', Surface Engineering and Applied Electrochemistry, 52(4), p. 362. doi:10.3103/S1068375516040128. Cité 3 foisArticle
2016
Abderrahmane, A., Kermiche, M., Adjmi, S. and Zegadi, C. (2016) 'Réalisation d'un appareil de SILAR pour la déposition des nano couches des matériaux chalcogénures pour les cellules solaires', Revue des Energies Renouvelables, 19(4), pp. 567–574.Article
2016
Ko, P.J., Abderrahmane, A., Takamura, T., Kim, N.H. and Sandhu, A. (2016) 'Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector', Nanotechnology, 27(32), article no. 325202. doi:10.1088/0957-4484/27/32/325202. Cité 60 foisArticle
2016
Ko, P.J., Abderrahmane, A., Yoo, M.H., Kim, N.H. and Sandhu, A. (2016) 'Two-dimensional h-BN/MoSe2 heterostructures based phototransistors', in Korean Vacuum Society Conference Abstracts, p. 1336.Communication
2015
Abderrahmane, A., Kaddouri, M., Adnane, M. and Hamzaoui, S. (2015) 'Adsorption effect on the successive ionic layer adsorption and reaction technique', Surface Engineering and Applied Electrochemistry, 51(6), p. 557. doi:10.3103/S1068375515060022. Cité 4 foisArticle
2015
Zegadi, C., Abderrahmane, A., Djelloul, A., Hamzaoui, S., Adnane, M., Chaumont, D. and Abdelkebir, K. (2015) 'Effects on structural and electro-optical properties of iron incorporation to p-zinc oxide (ZnO) thin films deposited by dip-coating process', International Review of Physics, 9(2). Cité 18 foisArticle
2015
Ko, P.J., Abderrahmane, A., Thu, T.V., Ortega, D., Takamura, T. and Sandhu, A. (2015) 'Laser power dependent optical properties of mono- and few-layer MoS2', Journal of Nanoscience and Nanotechnology, 15(9), pp. 6843–6846. doi:10.1166/jnn.2015.10348. Cité 37 foisArticle
2014
Abderrahmane, A., Takahashi, H., Tashiro, T., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors', AIP Conference Proceedings, 1585, p. 123. doi:10.1063/1.4866629. Cité 1 foisArticle
2014
Abderrahmane, A., Ko, P.J., Thu, T.V., Ishizawa, S., Takamura, T. and Sandhu, A. (2014) 'High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors', Nanotechnology, 25(36), article no. 365202. doi:10.1088/0957-4484/25/36/365202. Cité 202 foisArticle
2014
Ko, P.J., Thu, T.V., Takahashi, H., Abderrahmane, A., Takamura, T. and Sandhu, A. (2014) 'High precision laser induced etching of multilayered MoS2', AIP Conference Proceedings, 1585, p. 73. doi:10.1063/1.4866622. Cité 4 foisArticle
2014
Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T., Shibasaki, I. and Sandhu, A. (2014) 'High proton radiation tolerance of InAsSb quantum wells based micro-Hall sensors', IEEE Electron Device Letters, 35(12), pp. 1305–1307. doi:10.1109/LED.2014.2359879. Cité 1 foisArticle
2014
Ko, P.J., Thu, T.V., Takamura, T., Abderrahmane, A. and Sandhu, A. (2014) 'MoSe2 semiconductor indirect-to-direct transition by laser induced etching', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting. Cité 2 foisCommunication
2014
Abderrahmane, A., Tashiro, T., Takahashi, H., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons', Applied Physics Letters, 104(2), article no. 023508. doi:10.1063/1.4861902. Cité 8 foisArticle
2014
Abderrahmane, A., Ko, P.J., Okada, H., Sato, S., Ohshima, T. and Sandhu, A. (2014) 'Proton irradiation enhancement of low-field negative magnetoresistance sensitivity of AlGaN/GaN based magnetic sensor at cryogenic temperature', IEEE Electron Device Letters, 35(11), pp. 1130–1132. doi:10.1109/LED.2014.2358613. Cité 13 foisArticle
2014
Abderrahmane, A., Takamura, T., Sato, S., Ohshima, T., Okada, H. and Sandhu, A. (2014) 'Radiation hard AlGaN/GaN heterostructure micro-Hall sensors', in JSAP Annual Meetings Extended Abstracts, 75th JSAP Autumn Meeting.Communication
2013
Abderrahmane, A., Koide, S., Tahara, T., Sato, S., Ohshima, T., Okada, H. and Sandhu, A. (2013) 'Effect of proton irradiation on 2DEG in AlGaN/GaN heterostructures', Journal of Physics: Conference Series, 433(1), article no. 012011. Cité 8 foisArticle
2013
Abderrahmane, A., Koide, S., Tashiro, T., Okada, H., Takahashi, H., Sato, S., Ohshima, T. and Sandhu, A. (2013) 'Effect of proton irradiation on AlGaN/GaN micro-Hall sensors', Applied Physics Letters, 102(19), article no. 193510. doi:10.1063/1.4805357. Cité 14 foisArticle
2012
Okada, H., Abderrahmane, A., Koide, S., Takahashi, H., Sato, S., Ohshima, T. and Sandhu, A. (2012) 'Effects of proton irradiation on the magnetoelectric properties of 2DEG AlGaN/GaN micro-Hall sensors', Journal of Physics: Conference Series, 352(1), article no. 012010. doi:10.1088/1742-6596/352/1/012010. Cité 5 foisArticle
2012
Koide, S., Takahashi, H., Abderrahmane, A., Shibasaki, I. and Sandhu, A. (2012) 'High temperature Hall sensors using AlGaN/GaN HEMT structures', Journal of Physics: Conference Series, 352(1), article no. 012009. doi:10.1088/1742-6596/352/1/012009. Cité 56 foisArticle
2012
Abderrahmane, A., Koide, S., Sato, S., Ohshima, T., Sandhu, A. and Okada, H. (2012) 'Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments', IEEE Transactions on Magnetics, 48(11), pp. 4421–4423. doi:10.1109/TMAG.2012.2196986. Cité 29 foisArticle
2010
Adnane, M., Sahraoui, T., Abderrahmane, A., Hamzaoui, S. and Chaumont, D. (2010) 'Élaboration et caractérisations des matériaux binaires CuxS et Ag2S élaborés par la technique SILAR pour couche tampon de cellule solaires à base de couche absorbante CIS', Revue des Energies Renouvelables, 13(4), p. 625. Cité 3 foisArticle

Séminaires, conférences et exposés invités (31)

2022
L. Kadri, A. Abderrahmane, A. Khiat, L. Benharrat, P. Ghosh, M. Adnane, S. Krishnamurthy, « Effect of H2-plasma treatment on the spin-coated perovskite solar cells », 1st International Conference on Renewable Materials and Energies (ICRME 2022), 26-27 octobre 2022, Ouargla, Algérie.
2021
A. Abderrahmane, C. Woo, P. J. Ko, « Two-dimensionally layered graphene/MoSe2/Black phosphorus heterojunction », ICAE 2021, 6th International Conference on Advanced Electro Materials, 9-12 novembre 2021, Jeju, Corée.
2021
P. G. Jung, C. L. Woo, A. Abderrahmane, P. J. Ko, « Dual-gate Graphene/h-BN/GaSe Metal-Insulator-Semiconductor Field Effect Transistor (MISFET) », ICAE 2021, 9-12 novembre 2021, Jeju, Corée.
2021
C. L. Woo, P. G. Jung, A. Abderrahmane, P. J. Ko, « Optoelectronic properties of WSe2/SnSe2/WSe2 van der Waals heterojunction field effect transistor », ICAE 2021, 9-12 novembre 2021, Jeju, Corée.
2019
A. Tab, Y. Bakha, A. Abderrahmane, M. Zerdali, S. Hamzaoui, « Nano Grain of Zinc Oxide Assembled in Hex Nut Deposited by Sol Gel Coating Method », 1st International Conference on Renewable Energy and Energy Conversion (ICREEC 2019), Algérie.
2018
Y. Bakha, H. Khales, A. Abderrahmane, R. Serhane, A. Smatti, « ZnO thin films prepared by chemical method on QCM for CH4 gas sensing », 12th National Congress of Physics and its Applications, 13-15 novembre 2018, Alger, Algérie.
2018
A. Abderrahmane, B. Hachemi, R. Benachenhou, A. Iles, S. Hamzaoui, « Portable Fluorescent Microscope for Microrobotic Application and Point-Of-Care (POC) Diagnostics », OPAL 2018, 5-7 mai 2018, USTO-MB, Oran, Algérie.
2018
A. Abderrahmane, M. M. Achouri, C. Zegadi, A. Tab, P. J. Ko, S. Hamzaoui, « High Performance n-type and p-type Two-dimensional Materials for Optoelectronic Devices and Photodetection Applications », OPAL 2018, 5-7 mai 2018, USTO-MB, Oran, Algérie.
2018
L. Kadri, A. M. Sahari, A. Abderrahmane, A. Khiat, S. Hamzaoui, « Extraction of silica from diatomite for optical applications and for solar grade silicon (SoG-Si) development », OPAL 2018, 5-7 mai 2018, USTO-MB, Oran, Algérie.
2018
M. M. Achouri, N. Ziani, R. Bouamrane, A. Abderrahmane, « Interatomic potentials development and optical properties of alpha tellurite and the europium oxide », OPAL 2018, 5-7 mai 2018, USTO-MB, Oran, Algérie.
2017
A. Abderrahmane, R. Yukino, K. Ambai, H. Tokuhara, H. Zhang, Y. Okamura, H. Kimura, R. Kita, A. Sandhu, « Fabrication and magnetic control of polymer based soft nanorobot », IRAGO 2017, 1-2 novembre 2017, University of Electro-Communications, Chofu, Tokyo, Japon.
2017
A. Abderrahmane, P. J. Ko, A. Sandhu, « Nano-layered MoSe2 Based Near-Infrared Photodetector », IRAGO 2017, 1-2 novembre 2017, University of Electro-Communications, Chofu, Tokyo, Japon.
2016
A. Abderrahmane, P. J. Ko, A. Sandhu, « Gate-Tunable Optoelectronic Properties of Nano-layered GaSe Based Photodetector », IRAGO 2016, 1-2 novembre 2016, University of Electro-Communications, Chofu, Tokyo, Japon.
2016
A. Abderrahmane, T. Takamura, H. Okada, A. Sandhu, « γ-Irradiation Effect on AlGaN/GaN Heterostructures », IRAGO 2016, 1-2 novembre 2016, Chofu, Tokyo, Japon.
2016
A. Abderrahmane, H. Miyashita, R. Yukino, T. Takamura, A. Sandhu, « Magnetic control of self-assembled superparamagnetic micro-particles for microrobotic applications », IRAGO 2016, 1-2 novembre 2016, Chofu, Tokyo, Japon.
2016
T. Takamura, R. Yukino, H. Tahara, A. Abderrahmane, A. Sandhu, « Novel capsule for nanoscale observation of materials in liquid by transmission electron microscopy », IRAGO 2016, 1-2 novembre 2016, Chofu, Tokyo, Japon.
2016
P. J. Ko, A. Abderrahmane, M. H. Yoo, N.-H. Kim, A. Sandhu, « Two-dimensional h-BN/MoSe2 heterostructures based phototransistors », Résumés de la conférence de la Société coréenne du vide, 2016, p. 1336.
2014
A. Abderrahmane, P. J. Ko, S. Ishizawa, T. Takamura, A. Sandhu, « High photosensitivity few-layered MoSe2 back gated field-effect phototransistors », IRAGO 2014, 6-7 novembre 2014, AIST, Tsukuba, Ibaraki, Japon.
2014
A. Abderrahmane, P. J. Ko, S. Sato, T. Ohshima, H. Okada, I. Shibasaki, A. Sandhu, « High proton irradiation tolerance of InAsSb quantum well based micro-Hall sensors », IRAGO 2014, 6-7 novembre 2014, AIST, Tsukuba, Japon.
2014
P. J. Ko, A. Abderrahmane, T. Takamura, A. Sandhu, « Reducing few-layered MoSe2 film to single-layer by laser etching », IRAGO 2014, 6-7 novembre 2014, AIST, Tsukuba, Japon.
2014
A. Abderrahmane, T. Takamura, S. Sato, T. Ohshima, H. Okada, A. Sandhu, « Radiation Hard AlGaN/GaN Heterostructure Micro-Hall Sensors », Japan Society of Applied Physics, 75th Autumn Meeting, 17-20 septembre 2014, Hokkaido University, Japon.
2014
P. J. Ko, T. V. Thu, T. Takamura, A. Abderrahmane, A. Sandhu, « MoSe2 semiconductor indirect-to-direct transition by laser induced etching », Japan Society of Applied Physics, 75th Autumn Meeting, 17-20 septembre 2014, Hokkaido University, Japon.
2013
A. Abderrahmane, H. Okada, S. Sato, T. Ohshima, A. Sandhu, « Effect of Annealing on Proton Irradiated AlGaN/GaN based micro-Hall sensors », IRAGO 2013, 24-25 octobre 2013, Tahara, Aichi, Japon.
2013
A. Abderrahmane, H. Takahashi, T. Tashiro, P. J. Ko, H. Okada, S. Sato, T. Ohshima, A. Sandhu, « Effect of Annealing on Proton Irradiated AlGaN/GaN based micro-Hall sensors », IRAGO 2013, 24-25 octobre 2013, Tahara, Aichi, Japon.
2013
A. Abderrahmane, A. Sandhu, « High temperature Scanning Hall Probe Microscopy and Temperature Sensors », Réunion de restitution du projet EIIRIS, Toyohashi University of Technology, Japon.
2012
A. Abderrahmane, S. Koide, H. Takahashi, T. Tahara, H. Okada, S. Sato, T. Ohshima, A. Sandhu, « Effect of Proton Irradiation on Quantum Hall Effect in AlGaN/GaN 2DEG Heterostructures », AP-IRC 2012, 15-16 novembre 2012, Tahara, Aichi, Japon.
2012
A. Abderrahmane, H. Okada, S. Koide, S. Sato, T. Ohshima, A. Sandhu, « Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments », INTERMAG 2012, 7-11 mai 2012, Vancouver, Canada.
2011
A. Abderrahmane, S. Koide, H. Takahashi, H. Okada, S. Sato, T. Ohshima, A. Sandhu, « Proton Irradiation of 2-DEG AlGaN/GaN Micro-Hall Sensors », AP-IRC 2011, 17-18 novembre 2011, Toyohashi University of Technology, Japon.
2010
A. Abderrahmane, S. Hamzaoui, « Successive ionic layer adsorption and reaction and Dip-coating techniques automation for thin films elaboration », Séminaire national de la recherche scientifique, 14-15 mars 2010, USTHB, Alger, Algérie.
2009
A. Abderrahmane, M. Adnane, T. Sahraoui, S. Hamzaoui, « Study on the physical phenomenon intervening in the successive ionic layer adsorption and reaction technique », 1er séminaire national sur les matériaux et leurs applications, 7-9 décembre 2009, USTHB, Alger, Algérie.
2008
F. Hamdache, M. Bendeddouche, A. Abderrahmane, F. Belkhadem, F. Hamidi, « Study on the carries distribution on the surface of Algerian Montmorillonite », 22e réunion des sciences de la Terre, 21-24 avril 2008, Université de Nancy, France.